基于悬浮吸收层的热电堆红外探测器结构设计 |
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引用本文: | 陈媛婧,毛海央,谭秋林,薛晨阳,欧文,陈大鹏,熊继军. 基于悬浮吸收层的热电堆红外探测器结构设计[J]. 传感技术学报, 2014, 27(6) |
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作者姓名: | 陈媛婧 毛海央 谭秋林 薛晨阳 欧文 陈大鹏 熊继军 |
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摘 要: | 在这项工作中,设计一种新颖的热电堆红外探测器结构。该检测器利用悬浮吸收层-热电堆双层结构来实现高性能,同时具有相对小的尺寸。该双层结构的实现是通过引入两个分离的牺牲层,分别包括热电堆下方的多晶硅膜和其上方的聚酰亚胺沉积实现。尺寸优化后的仿真结果表明,该红外探测器的探测率、响应率和响应时间分别可以达到2.85e8 cmHz ( 1/2) / W, 1800 V / W和6毫秒。此外,本文提出热电堆红外探测器的制造方法是高度兼容于标准的CMOS工艺,这就使其高产量和低成本的生产成为可能。
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关 键 词: | 热电堆,悬浮吸收双层结构,聚酰亚胺,正面腐蚀,CMOS工艺 |
Design of thermopile-based infrared detectors with suspended absorber-thermopile bi-layers |
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Abstract: | In this work, a novel infrared (IR) detector is designed and presented. The detector takes advantage of suspended absorber-thermopile bi-layers to achieve high performance with a relatively small size. The bi-layers are realized by using two separated sacrificial layers, which include a Poly-Si film beneath the thermopiles and a polyimide deposition over the thermopiles. Simulation results demonstrate that the detectivity, responsibility and response time of the IR detectors can reach 2.85e8 cmHz(1/2)/W, 1800 V/W and 6 ms, respectively. Moreover, the fabrication of the IR detector is highly compatible with standard CMOS process, which as a result, makes the high-yield and low-cost production possible. |
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Keywords: | Infrared thermopiles Suspended absorber-thermopile bi-layers Polyimide Front-etching CMOS process |
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