温度对SRAM器件单粒子翻转重离子测试的影响

本文基于单粒子效应地面重离子模拟实验，选取体硅SRAM与SOI SRAM两种待测器件，在兰州重离子加速器上（HIRLF）研究了温度对单粒子翻转测试的影响。用12C粒子对体硅SRAM器件的温度实验显示，单粒子翻转截面易受温度的影响。对于SOI SRAM器件，12C粒子测得的单粒子翻转截面随温度升高有显著的增大，但209Bi 粒子测得的单粒子翻转截面却随温度保持恒定。用Monte Carlo的方法分析了温度对单粒子翻转测试的影响规律，发现在单粒子翻转阈值LET附近温度对单粒子翻转截面有大的影响，但是随着单粒子翻转的发生接近于饱和，单粒子翻转截面渐渐的表现出低的温度依赖性。基于该模拟结果，我们对实验数据进行了分析，同时提出了一种准确评估在轨翻转率的合理方法。

Impact of temperature on single event upset measurement by heavy ions in SRAM devices

The temperature dependence of single event upset (SEU) measurement both in commercial bulk and silicon on insulator (SOI) static random access memories (SRAMs) has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou (HIRFL). For commercial bulk SRAM, the SEU cross section measured by ¹²C ions is very sensitive to the temperature. The temperature test of SEU in SOI SRAM was conducted by ²⁰⁹Bi and ¹²C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for ¹²C ions but keep constant for ²⁰⁹Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed.