|
|||||
|
|
Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFET |
|
| Authors: | Won-ju Cho Kiju Im Jong-Heon Yang Jihun Oh Seongjae Lee Kyoungwan Park |
| Affiliation: | (1) Fundamental Technology Department, Basic Research Lab., ETRI, 161, Gajeong-dong, Yuseong-gu, Daejon, 305-360, Korea;(2) Department of Nano Science & Technology, University of Seoul, 590 Cheonnong-dong, Dongdaemun-gu Seoul, 130-743, Korea |
| Abstract: | |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |
