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形状记忆聚合物表面弹性薄膜的屈曲研究1)
引用本文:白梦琪, 孟宪红. 形状记忆聚合物表面弹性薄膜的屈曲研究1)[J]. 力学与实践, 2018, 40(4): 367-371. doi: 10.6052/1000-0879-18-063
作者姓名:白梦琪  孟宪红
作者单位:* 北京航空航天大学实验学校,北京 100191; †北京航空航天大学固体所,北京 100191
基金项目:1) 国家自然科学基金资助项目(11572022)
摘    要:形状记忆聚合物具有形状变化后在特定条件下可恢复的特点,因此作为一种柔性基底材料在柔性电子中得到广泛应用。对于形状记忆聚合物基底和弹性薄膜组成的双层结构,当 基底收缩时,其表面的弹性薄膜可以形成屈曲波形。针对基底收缩过程中波形的变化, 本文实验测得形状记忆聚合物材料在不同温度下的 属性,结合一维应变恢复函数,利用柔性基底表面薄膜屈曲波形参数(波幅、波长等)表达式,求解得到了在基底收缩的过程中,弹性薄膜屈曲波形的变化规律,和实验结果吻合很好。

关 键 词:双层结构   形状记忆聚合物   弹性薄膜   屈曲波形
收稿时间:2018-02-02

BUCKLING ANALYSIS OF ELASTIC FILM BONDED ON SMP SUBSTRATE1)
BAI Mengqi, MENG Xianhong. BUCKLING ANALYSIS OF ELASTIC FILM BONDED ON SMP SUBSTRATE1)[J]. Mechanics in Engineering, 2018, 40(4): 367-371. doi: 10.6052/1000-0879-18-063
Authors:BAI Mengqi  MENG Xianhong
Affiliation:* Experimental School of Beihang University (BUAA), Beijing 100191, China; † Institute of Solid Mechanics, Beihang University (BUAA), Beijing 100191, China
Abstract:The shape memory polymer (SMP) can restore its shape under certain conditions after its shape deformation. Therefore, as a soft substrate material, it is widely used in flexible electronic devices. For a two-layer structure made of the shape memory polymer (SMP) substrate and the elastic thin film, the elastic film on the surface can form wrinkling patterns when the SMP substrate contracts. Due to the shape memory characteristics of the SMP, the shape of the flexible electronic device is related to the time and the temperature. In this paper, the wavelength and the amplitude of the wrinkling patterns are analyzed, and the mechanical properties of the SMP at different temperatures are measured by experiments. With one-dimensional strain recovery function of the SMP and the buckling characteristics of the elastic film bonded to a soft substrate, the variations of the wave length and the amplitude of the wrinkling patterns against the time and the temperature are obtained, with good agreement with the experimental results.
Keywords:bilayer structure|shape memory polymer|elastic film|wavy pattern  
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