| Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric |
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| 引用本文： | 汤晓燕,宋庆文,张玉明,张义门,贾仁需,吕红亮,王悦湖.Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric[J].中国物理 B,2012,21(8):87701-087701. |
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| 作者姓名： | 汤晓燕 宋庆文 张玉明 张义门 贾仁需 吕红亮 王悦湖 |
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| 作者单位： | School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 61006060 and 61176070). |
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| 摘 要： | Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1× 10-7 A/cm2 at electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.
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| 收稿时间： | 2012-02-10 |
Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric |
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| Tang Xiao-Yan,Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Jia Ren-Xu,L&#,Hong-Liang,Wang Yue-Hu.Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric[J].Chinese Physics B,2012,21(8):87701-087701. |
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| Authors: | Tang Xiao-Yan Song Qing-Wen Zhang Yu-Ming Zhang Yi-Men Jia Ren-Xu L&# Hong-Liang Wang Yue-Hu |
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| Affiliation: | School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1× 10-7 A/cm2 at electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface. |
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| Keywords: | 4H-SiC Al2O3 high-k dielectric |
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