Effect of La doping on microstructure and ferroelectric properties of Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films prepared by sol-gel method期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Effect of La doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by sol-gel method

Authors:	Chengju Fu Zhixiong Huang Dongyun Guo

Affiliation:	(1) School of Material Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China;(2) Department of Physics, Wuhan University, Wuhan, 430072, China

Abstract:	The Bi₄Ti₃O₁₂ and Bi_3.25La_0.75Ti₃O₁₂ thin films were prepared on the Pt/Ti/SiO₂/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi₄Ti₃O₁₂ films were investigated. Both the Bi₄Ti₃O₁₂ and Bi_3.25La_0.75Ti₃O₁₂ thin films exhibited typical bismuth layered perovskite structure. The 2Pr (remanent polarization) value of Bi_3.25La_0.75Ti₃O₁₂ thin films is 18.6 μC/cm², which is much larger than that of Bi₄Ti₃O₁₂ thin films. And the Bi_3.25La_0.75Ti₃O₁₂ films show fatigue-free behavior, while the Bi₄Ti₃O₁₂ thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed. Funded by the Foundation of Wuhan University of Science and Technology

Keywords:	ferroelectric properties sol-gel preparation Bi₄Ti₃O₁₂ thin films Bi_3.25La_0.75Ti₃O₁₂ thin films La doping fatigue
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