ZnO一维纳米线及其异质结构的外延生长

一维纳米结构因其优异的光、电特性，在纳米电子学，光电子学器件等方面有重要的应用价值而倍受关注．在一维半导体纳米材料中，ZnO因激子束缚能大（60meV），可在室温获得高效的紫外发光而成为近年来继GaN材料后的又一研究热点．外延生长一维纳米结构ZnO及其量子阱材料除因量子尺寸效应更适宜做室温紫外发光、激光材料与器件外，还因界面和量子限制效应而具有许多新奇的光、电、和力学特性，可应用于纳米光电子学器件，传感器及存储器件，纳米尺度共振隧道结型器件和场效应晶体管的研制和开发．文章着重介绍了目前ZnO一维纳米结构制备，一维ZnO纳米异质结构和一维ZnO／Zn1-xMgxO多量子阱结构的外延生长和研究进展．

Growth of epitaxial one-dimensional nanowires and heterostructures of ZnO

Abstract One-dimensional nanostructures have attracted considerable attention due to their exceptional properties and potentially unique applications in nanoscale electronics and optoelectronics. Among the variety of one-dimensional semiconductor nanometer materials, ZnO, with a large exciton binding energy of 60meV, attracts special attention because of its room temperature high-efficiency ultraviolet luminescence and many other novel electrical, optical, and mechanical properties. These attributes are produced by the surface and quantum confinement effects. We review the newest advances in the fabrication of one-dimensional nanostructured ZnO materials, ZnO nanosized heterojunctions, and ZnO/Zn1-xMgxO multiple quantum well nanorods.