Growth of carbon-doped base GaAs/AlGaAs HBT by gas-source MBE using TEG, TEA, TMG, AsH3, and Si2H6 |
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Authors: | Hideyasu Ando Toshio Fujii Adarsh Sandhu Tsuyoshi Takahashi Hideaki Ishikawa Naoya Okamoto and Naoki Yokoyama |
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Affiliation: | Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi 243-01, Japan |
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Abstract: | High-performance carbon-doped-base GaAs/AlGaAs heterobipolar transistors (HBTs) were grown by gas-source MBE using only gaseous sources including dopant sources. The AlGaAs emitter layer was doped with Si from uncracked SI2H6 (n = 9 × 1017 cm-3), and the base layer (92.5 nm) was doped with carbon from TMG (p = 4 × 1019 cm-3). From SIMS analysis it was confirmed that a well-defined emitter-base junction with sharp carbon profile was obtained. The base-current ideality factor from the Gummel plot was 1.47, and the emitter-base junction ideality factor was 1.12. A high DC current gain of 53 was obtained at a current density of 4 × 104 A/cm2. The device characteristics of our carbon-doped HBTs were found to be stable under current stress. |
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