Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host

Arrays of strained nanoscale InP islands in an In_0.49Ga_0.51P host on a GaAs(100) substrate and InAs islands in a In_0.53Ga_0.47As host on an InP(100) substrate are obtained by metalorganic vapor-phase epitaxy (MOVPE). Their structural and photoluminescence properties are investigated. It is shown that the nanoscale islands that are formed measure 80 nm (InP/InGaP) and 25–60 nm (InAs/InGaAs). The photoluminescence spectra of the nanoscale islands display bands in the wavelength ranges 0.66–0.72 and 1.66–1.91 μm at 77 K with maxima whose position does not vary as the effective thickness of InP and InAs increases. The radiation efficiency of the nanoscale InP islands is two orders of magnitude greater than the luminescence intensity of the InAs islands. Fiz. Tekh. Poluprovodn. 33, 858–862 (July 1999)