| 对高速比较器中复位场效应管的研究 |
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| 引用本文： | 刘海涛,孟桥,王志功,唐凯.对高速比较器中复位场效应管的研究[J].半导体学报,2009,30(7):075002-5. |
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| 作者姓名： | 刘海涛 孟桥 王志功 唐凯 |
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| 摘 要： | A high-speed comparator design based on regeneration architecture, which can be used in a flash ADC, is presented.A threshold-limit-speed effect（TLSE） which limits the speed of the comparator was discovered and studied in detail.The size of the reset-MOSFET was optimized to resolve the TLSE and make the comparator work at the maximal speed.The results were confirmed by simulation and the corresponding circuit was realized in a flash ADC design in SMIC 0.18-μm CMOS technology.The test result shows that the comparator can work well at 2 GHz and can even work up to 2.8 GHz while the power dissipation is 3.2 mW.
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| 关 键 词： | MOSFET 体系结构设计 复位 场效应晶体管 极限速度 CMOS ADC 高速比 |
Effect of a reset-MOSFET in a high-speed comparator |
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| Liu Haitao,Meng Qiao,Wang Zhigong and Tang Kai.Effect of a reset-MOSFET in a high-speed comparator[J].Chinese Journal of Semiconductors,2009,30(7):075002-5. |
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| Authors: | Liu Haitao Meng Qiao Wang Zhigong and Tang Kai |
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| Affiliation: | Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China |
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| Abstract: | comparator high speed TLSE CMOS ADC |
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| Keywords: | comparator high speed TLSE CMOS ADC |
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