Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices |
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Authors: | Viktor Sverdlov Tibor Grasser Hans Kosina Siegfried Selberherr |
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Affiliation: | (1) Institute for Microelectronics, TU Vienna, Gusshausstr. 27–29, A-1040 Vienna, Austria |
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Abstract: | Transport in single and double barrier devices is studied using a Monte Carlo solver for the Wigner transport equation. This
approach allows the effects of tunneling and scattering to be included. Several numerical methods have been improved to render
the Wigner Monte Carlo technique more robust, including a newly developed particle annihilation algorithm. A self-consistent
iteration scheme with the Poisson equation was introduced. The role of scattering and space charge effects on the electrical
characteristics of n-i-n nanostructures, ultra-scaled double gate MOSFETs, and GaAs resonant tunneling diodes is demonstrated.
An erratum to this article can be found at |
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Keywords: | Device simulation Quantum transport Wigner equation Monte Carlo method |
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