高稳定度光泵浦腔内倍频488 nm半导体薄片激光器

设计了一种性能稳定、结构紧凑的光泵浦腔内倍频488 nm半导体薄片激光器。为获得光束质量好、输出性能稳定的488 nm激光器，利用808 nm LD从顶面垂直泵浦半导体增益介质芯片获得976 nm基频光，通过在腔内置入I类相位匹配的LBO晶体进行倍频获得488 nm激光输出。半导体增益介质芯片具有13量子阱和808 nm/976 nm双反射带反射镜，其双面键合金刚石散热片。在泵浦功率为9.2 W时，获得111 mW 488 nm激光输出，光谱线宽为1.3 nm，光-光效率为1.2%，光束质量Mx2、My2分别为1.03和1.02，连续工作3 h激光输出功率不稳定度为0.6%。

High stability 488 nm light generated by intra-cavity frequency doubling in optically pumped semiconductor disc lasers

A high stability and compact structure 488 nm light generated by intra-cavity frequency doubling in an optically pumped semiconductor disc laser was designed. In order to obtain a 488 nm laser with good beam quality and stable performance output, a semiconductor gain medium chip with 13 QWs and 808 nm/976 nm Double Band Mirror was pumped vertically by 808 nm LD on the top surface of the chip, and the chip with double diamond heat spreaders bonded on the both sides was introduced. 488 nm laser was generated by doubling frequency with I phase matched LBO crystals inserted in the cavity. 111 mW 488 nm laser with 1.3 nm spectral line width was obtained, the optical to optical efficiency was 1.2%, the beam quality of Mx2、My2 were 1.03 and 1.02 respectively, and the instability is less than 0.6% with continuously work for more than 3 h.