Reliability analysis of GaN-based light emitting diodes for solid state illumination |
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Authors: | Yang Ling Ma Xiao-Hu Feng Qian and Hao Yue |
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Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap
Semiconductor Materials and Devices, Microelectronics Institute,
Xidian University, Xi'an 710071, China |
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Abstract: | In this paper, we have discussed the effect of electrical stress on
GaN light emitting diode (LED). With the lapse of time, the LED with
an applied large current stress can reduce its current more than
without such a stress under a large forward-voltage drop. Its
scanning electron microscopy (SEM) image shows that there exist
several pits on the surface of the p-metal. With an electrical
stress applied, the number of pits greatly increases. We also find
that the degradation of GaN LED is related to the oxidized Ni/Au
ohmic contact to p-GaN. The electrical activation of H-passivated Mg
acceptors is described in detail. Annealing is performed in ambient
air for 10 min and the differential resistances at a forward-voltage
drop of 5\,V are taken to evaluate the activation of the Mg
acceptors. These results suggest some mechanisms of degradation
responsible for these phenomena, which are described in the paper. |
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Keywords: | GaN based LED electrical
stress pits annealing mechanism of degradation |
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