| PECVD方法用于梯度薄膜材料的研究 |
| |
| 引用本文： | 於伟峰,张伟.PECVD方法用于梯度薄膜材料的研究[J].功能材料,1996,27(6):530-533. |
| |
| 作者姓名： | 於伟峰 张伟 |
| |
| 作者单位： | 复旦大学电子工程系 |
| |
| 基金项目： | 国家自然科学基金委员会材料与工程学部资助 |
| |
| 摘 要： | 本文研究了ＰＥＣＶＤ方法制备Ｓｉ－Ｏ－Ｍ系梯度薄膜材料，并运用计算机控制技术成功地制备了涂层折射率随膜深成正弦波形式连续变化的Ｒｕｇａｔｅ单通带滤波器样品。结果表明，采用ＰＥＣＶＤ方法可以制备性能上乘、结构复杂的梯度薄膜材料，ＰＥＣＶＤ方法在研究、开发高级光学涂层领域有着宽广的应用前景。
|
| 关 键 词： | PECVD 氮氧化硅 梯度薄膜 薄膜 |
Study of Gradient Thin Film Material Produced by PECVD |
| |
| Yu Weifeng,Zhang Wei,Tang Xiaodong,Bao Zongming.Study of Gradient Thin Film Material Produced by PECVD[J].Journal of Functional Materials,1996,27(6):530-533. |
| |
| Authors: | Yu Weifeng Zhang Wei Tang Xiaodong Bao Zongming |
| |
| Abstract: | Si O N system functionally gradient thin film is grown by plasma enhanced chemical vapour deposition(PECVD) controlled by computer,using SiH 4(15% diluted by N 2),N 2O and NH 3 as reactants.The properties of the gradient film,refractive index n and diposition rate G depend on the reactant ratio.The gradient silicon oxynitride has been used successfully for the fabrication of rugate filter which employs a sinusoidal refractive index depth profile.The results show that the way of PECVD has the practicability in fabricating gradient thin film. |
| |
| Keywords: | PECVD silicon oxynitride gradient thin film Rugate filter |
| 本文献已被 CNKI 维普 等数据库收录！ |
