大面积复杂掩模图形的快速光刻仿真研究

大面积复杂掩模图形的光刻仿真,要同时满足高精度和高效率两个要求。为克服现有方法积分区域大,计算效率低等问题,提出了一种基于最有效影响区域的简化计算方法。该方法首先利用波前分割的方法确定影响光刻胶目标场点光强的最有效影响区域,以此局部区域替代原来的整体积分区域作光强的计算,将积分区域由整个掩模图形缩小为图形的一小部分。试验结果表明,该算法与现有方法比较,精度上非常接近,但速度显著加快,且稳定可靠。该方法能够快速准确地对大面积复杂掩模图形进行光刻仿真,具有重要的应用价值。

Fast lithography simulation method of complex mask pattern with large-area

In addition to hish-precision,high-efficiency is another important factor that must be taken into account in lithography simulation of complex mask pattern with large-area,for large domain of integration in existing methods often leads to low computational efficiency.To overcome this shortage a simplified method is proposed based on wavefront division on the mask plane.In the presented theoretical model.the special wave-front region that has the most impact on the field points is determined.This local region is then used to substitute for the entire mask pattern region in intensity calculation,thus the whole integration domain is reduced to a small part.Simulation and experiment results show that the calculation speed of the new algorithm is significantly improved and the computation accuracy is very close to conventional methods.And the computational results are stable and reliable.It is a promising method with significant application values in rapid and accurate simulation of complex mask pattern with large-area.