| 溅射沉积氢化非晶硅中辉光放电等离子体的Langmuir探针诊断 |
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| 引用本文： | 李洪涛,蒋百灵,杨波,曹政,郭维华,焦栋茂. 溅射沉积氢化非晶硅中辉光放电等离子体的Langmuir探针诊断[J]. 真空科学与技术学报, 2011, 31(4): 476-480. DOI: 10.3969/j.issn.1672-7126.2011.04.18 |
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| 作者姓名： | 李洪涛 蒋百灵 杨波 曹政 郭维华 焦栋茂 |
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| 作者单位： | 1. 西安理工大学材料学院 西安710048
2. 广西大学材料学院 南宁530004 |
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| 基金项目： | 陕西省重点学科建设专项资金; 西安理工大学优博基金(101-210905)资助项目 |
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| 摘 要： | 为揭示磁控溅射辉光放电等离子体参量对Si薄膜沉积过程的本质影响,采用Langmuir探针于不同的靶电流、靶基距和氢分压条件下对直流辉光放电等离子体进行了诊断,分析了直流辉光放电等离子体参量(离子密度、离子流通量、等离子体电势、电子密度、电子温度)的变化规律,并以此为依据探讨了其对Si靶溅射过程和溅射Si粒子输运过程的影...
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| 关 键 词： | 磁控溅射 Langmuir探针 等离子体 离子密度 电子密度 |
Diagnosis of Glow Discharge Plasma with Langmuir Probe inGrowth of Magnetron Sputtered a-Si:H Film |
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| Li Hongtao,Jiang Bailing,Yang Bo,Cao Zheng,Guo Weihua,Jiao Dongmao. Diagnosis of Glow Discharge Plasma with Langmuir Probe inGrowth of Magnetron Sputtered a-Si:H Film[J]. JOurnal of Vacuum Science and Technology, 2011, 31(4): 476-480. DOI: 10.3969/j.issn.1672-7126.2011.04.18 |
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| Authors: | Li Hongtao Jiang Bailing Yang Bo Cao Zheng Guo Weihua Jiao Dongmao |
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| Affiliation: | Li Hongtao1,Jiang Bailing1,Yang Bo1,Cao Zheng1,Guo Weihua2,Jiao Dongmao1(1.Department of Materials Science and Engineering,Xi'an University of Technology,Xi'an 710048,China,2.School of Materials Science and Engineering,Guangxi University,Nanning 530004,China) |
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| Abstract: | The amorphous hydrogenated silicon films(a-Si:H) were deposited by plasma enhanced DC magnetron sputtering.The impacts of the growth conditions,such as the target current,hydrogen partial pressure,target-substrate separation,and plasma enhancement,on microstructures and quality of the films were studied.The characteristics of the glow discharge plasma,including the ion density and flux,plasma potential distribution,electron density and temperature,were in-situ evaluated with Langmuir probe.The results show ... |
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| Keywords: | Magnetron sputtering Langmuir probe Plasma Ion density Electron density |
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