| 量子阱平面光学各向异性的偏振差分反射谱研究 |
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| 引用本文： | 陈涌海,叶小玲,王占国.量子阱平面光学各向异性的偏振差分反射谱研究[J].固体电子学研究与进展,2002,22(4):412-416. |
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| 作者姓名： | 陈涌海 叶小玲 王占国 |
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| 作者单位： | 中科院半导体研究所,半导体材料科学实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金 6990 60 0 3，国家重点基础研究专项经费 G2 0 0 0 683资助 |
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| 摘 要： | 在室温下用偏振差分反射谱技术观察到了 Ga As/Al Ga As、In Ga As/Ga As和 In Ga As/In P三种量子阱材料的平面光学各向异性。我们发现 Ga As/Al Ga As量子阱 1 h→ 1 e跃迁的偏振度与阱宽成反比 ,与 In Ga As/In P量子阱的报道结果类似。 Ga原子偏析引起的界面不对称可以很好地解释这种行为。与之相反 ,In Ga As/Ga As量子阱的光学各向异性倾向于与阱宽成正比。目前还不能很好地解释这种现象。
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| 关 键 词： | 光学各向异性 量子阱 界面不对称 偏振 |
| 文章编号： | 1000-3819(2002)04-412-05 |
| 修稿时间： | 2001年12月25 |
In-plane Optical Anisotropy of Quantum Well Structures Studied by Reflectance Difference Spectroscopy |
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| CHEN Yonghai,YE Xiaoling,WANG Zhanguo.In-plane Optical Anisotropy of Quantum Well Structures Studied by Reflectance Difference Spectroscopy[J].Research & Progress of Solid State Electronics,2002,22(4):412-416. |
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| Authors: | CHEN Yonghai YE Xiaoling WANG Zhanguo |
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| Abstract: | The in plane optical anisotropy of a series of GaAs/AlGaAs,InGaAs/GaAs and InGaAs/InP quantum well (QW) structures has been observed by reflectance difference spectroscopy (RDS) at room temperature.It is found that the polarization degree of excitonic transitions of GaAs/AlGaAs QW is inversely proportional to the well width,like the case of InGaAs/InP QW that has studied by other authors.This behavior can be well explained by the interface asymmetry of QWs appearing as a result of the segregation of gallium atoms during growth.In contrast,the optical anisotropy of InGaAs/GaAs QW tends to increase linearly with the well width,which can not be well explained at present. |
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| Keywords: | optical anisotropy quantum well interface asymmetry polarization |
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