Power m.o.s.f.e.t. linear h.f. amplifiers |
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Authors: | Sauert Wolfgang |
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Affiliation: | Technische Universit?t Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, West Germany; |
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Abstract: | N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors. |
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