| 高压LDMOS器件ESD初始失效问题及其优化方向研究 |
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| 引用本文： | 徐向明,苏庆,金锋,王邦麟.高压LDMOS器件ESD初始失效问题及其优化方向研究[J].固体电子学研究与进展,2012,32(3):257-261. |
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| 作者姓名： | 徐向明 苏庆 金锋 王邦麟 |
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| 作者单位： | 上海华虹NEC电子有限公司,上海,201206 |
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| 摘 要： | 研究了LDMOS在ESD放电过程中的机理及二次触发的现象,通过对LDMOS器件关键尺寸的优化设计与结构的改进,结合器件计算机辅助设计技术(TCAD)仿真、传输线脉冲(TLP)测试以及失效分析(FA)等手段,改善了其初始失效问题。同时大幅提升了LDMOS的ESD泄放能力,并进一步总结了LDMOS器件的ESD性能的优化方向。
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| 关 键 词： | 高压横向扩散金属氧化物半导体 静电保护 器件优化 初始失效 二次触发 |
Study on the ESD Initial Failure Mechanism and Its Improvement for HV LDMOS Devices |
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| XU Xiangming
,
SU Qing
,
JIN Feng
,
WANG Banglin.Study on the ESD Initial Failure Mechanism and Its Improvement for HV LDMOS Devices[J].Research & Progress of Solid State Electronics,2012,32(3):257-261. |
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| Authors: | XU Xiangming SU Qing JIN Feng WANG Banglin |
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| Affiliation: | (Shanghai Hua Hong NEC Electronics Company,Limited,Shanghai,201206,CHN) |
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| Abstract: | In this paper,the mechanism of ESD and secondary trigger phenomenon for LDMOS was studied.The initial failure on LDMOS devices has been overcome by the design optimization of device key dimensions and structure combined with TCAD(Technology Computer Aided Design) simulation,TLP(Transmission Line Pulse) testing and FA(Failure Analysis) techniques,resulting in great improvement for ESD robustness of LDMOS.In addition,the ESD design proposal of LDMOS device has been given. |
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| Keywords: | HV LDMOS ESD device optimization initial failure secondary trigger |
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