Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions |
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Authors: | Hyung Koun Cho Jeong Yong Lee Chi Sun Kim Gye Mo Yang |
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Affiliation: | (1) Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Gusong-dong, Yusong-gu, 305-701 Daejon, Korea;(2) Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Duckjin-Dong, 561-756 Chunju, Korea |
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Abstract: | We have studied the influence of indium (In) composition on the structural and optical properties of Inx Ga1−xN/GaN multiple quantum wells (MQWs) with In compositions of more than 25% by means of high-resolution x-ray diffraction (HRXRD),
photoluminescence (PL), and transmission electron microscopy (TEM). With increasing the In composition, structural quality
deterioration is observed from the broadening of the full width athalf maximum of the HRXRD superlattice peak, the broad multiple
emission peaks oflow temperature PL, and the increase of defect density in GaN capping layers and InGaN/GaN MQWs. V-defects,
dislocations, and two types of tetragonal shape defects are observed within the MQW with 33% In composition by high resolution
TEM. In addition, we found that V-defects result in different growth rates of the GaN barriers according to the degree of
the bending of InGaN well layers, which changes the period thickness of the superlattice and might be the source of the multiple
emission peaks observed in the InxGa1−xN/GaN MQWs with high in compositions. |
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Keywords: | Multiple quantum well (MQW) transmission electron microscopy (TEM) V-defect structural quality |
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