| 利用MOVPE选区外延生长InGaAsP |
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| 引用本文： | 邱伟彬,董杰,王圩,周帆.利用MOVPE选区外延生长InGaAsP[J].半导体学报,2003,24(4). |
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| 作者姓名： | 邱伟彬 董杰 王圩 周帆 |
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| 作者单位： | 中国科学院半导体研究所,国家光电子工艺中心,北京,100083 |
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| 摘 要： | 研究了利用低压MOVPE宽条(15μm)选区外延生长InGaAsP的性质.研究了生长速率、厚度增强因子、带隙调制、组分调制随着生长条件如掩模宽度、生长压力、Ⅲ族源流量的变化规律,给出了合理的解释.同时研究了不同Ⅴ/Ⅲ比下选择性生长InGaAsP表面尖角的性质.
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| 关 键 词： | 选区外延 MOVPE InGaAsP 表面尖角 Ⅴ/Ⅲ比 |
Selective Area Growth InGaAsP by MOVPE |
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| Qiu Weibin,Dong Jie,Wang Wei,Zhou Fan.Selective Area Growth InGaAsP by MOVPE[J].Chinese Journal of Semiconductors,2003,24(4). |
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| Authors: | Qiu Weibin Dong Jie Wang Wei Zhou Fan |
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| Abstract: | The wide stripe (15μm) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated.The characteristics of the growth ratios,thickness enhancement factors,bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure.Flux of Ⅲ-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained.In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of Ⅴ/Ⅲ. |
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| Keywords: | SAG MOVPE InGaAsP edge spike Ⅴ/Ⅲ ratio |
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