| 高性能六边形发射极InGaP/GaAs异质结双极型晶体管 |
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| 引用本文： | 刘洪刚,袁志鹏,和致经,吴德馨. 高性能六边形发射极InGaP/GaAs异质结双极型晶体管[J]. 半导体学报, 2003, 24(11) |
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| 作者姓名： | 刘洪刚 袁志鹏 和致经 吴德馨 |
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| 作者单位： | 中国科学院微电子中心,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，中国科学院资助项目 |
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| 摘 要： | 六边形发射极的自对准InGaP/GaAs异质结具有优异的直流和微波性能.采用发射极面积为2μm×10μm的异质结双极型晶体管,VCE偏移电压小于150mV,膝点电压为0.5V(IC=16mA),BVCEO大于9V,BVCBO大于14V,特征频率高达92GHz,最高振荡频率达到105GHz.这些优异的性能预示着InGaP/GaAs HBT在超高速数字电路和微波功率放大领域具有广阔的应用前景.
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| 关 键 词： | 异质结双极型晶体管 InGaP/GaAs 六边形发射极 |
Super Performance InGaP/GaAs Heterojunction Bipolar Transistor with Hexagonal Emitter |
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| Liu Honggang,Yuan Zhipeng,He Zhijing,Wu Dexin. Super Performance InGaP/GaAs Heterojunction Bipolar Transistor with Hexagonal Emitter[J]. Chinese Journal of Semiconductors, 2003, 24(11) |
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| Authors: | Liu Honggang Yuan Zhipeng He Zhijing Wu Dexin |
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| Abstract: | Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low VCE offset voltage (＜0.15V) and low knee voltage (＜0.5V).Over 14V of the collector-base breakdown voltage BVCBO and over 9V of the collector-emitter breakdown voltage BVCEO are obtained.For a self-aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the fT is extrapolated to 92GHz and fmax is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high-speed digital circuit and microwave power applications. |
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| Keywords: | HBT InGaP/GaAs hexagonal emitter |
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