铜膜碘化法制备p型CuI薄膜及其用作空穴传输层的反型钙钛矿电池性能

γ相碘化亚铜(γ-CuI)是一种带隙为3.1 eV的p型半导体材料, 适合应用于发光二极管和太阳能电池等光电子器件。本研究利用简单的铜膜碘化法制备了CuI薄膜, 探究了碘化时间、温度及铜/碘比等生长条件对其透明导电性能的影响。在最优碘化时间(30 min)和碘化温度(120℃)下, 制备出了高透过率(可见光范围>75%)、导电性能好(电阻率4.4×10^-2 Ω·cm)的CuI薄膜。利用CuI薄膜作为空穴传输层, 组装了CuI/CH₃NH₃PbI₃/PCBM反型平面钙钛矿电池, 获得的最高光电转换效率为8.35%, 讨论了CuI薄膜透明导电性能对钙钛矿电池光电转换效率的影响机理。

p-type CuI Films Grown by Iodination of Copper and Their Application As Hole Transporting Layers for Inverted Perovskite Solar Cells

γ-phase copper iodide (γ-CuI) is a wide bandgap p-type semiconductor with a band gap of 3.1 eV, which is suitable for optoelectronic devices like light-emitting diodes and solar cells. A simple and convenient method of iodination of copper film to prepare CuI film was reported. The effects of iodination time, reaction temperature, and copper/iodine ratio on the transparent and conductive properties of CuI film were explored. CuI films with high transmittance over 75% in the visible range and low resistivity of 4.4×10^-2 Ω·cm were grown under the optimized iodination time (30 min) and iodination temperature (120℃). The CuI films were adopted as hole transporting layers for CuI/CH₃NH₃PbI₃/PCBM inverted planar perovskite solar cell and a maximum photovoltaic efficiency of 8.35% was obtained. The influences of the transparent and conductive properties of CuI films on the solar cell photovoltaic efficiency were also discussed.