Calculations of two dimensional electron gas distributions in AlGaN/GaN material system |
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Authors: | Guo Bao-Zeng Gong Na and Yu Fu-Qiang |
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Affiliation: | College of Electronic and Informational
Engineering, Hebei
University, Baoding 071002, China; College of Physics, Hebei Normal University, Shijiazhuang
050016, China |
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Abstract: | This paper presents calculating results of the two-dimensional
electron gas (2DEG) distributions in AlGaN/GaN material system by
solving the Schr\"{o}dinger and Poisson equations self-consistently.
Due to high 2DEG density in the AlGaN/GaN heterojunction interface,
the exchange correlation potential should be considered among the
potential energy item of Schr\"{o}dinger equation. Analysis of the
exchange correlation potential is given. The dependencies of the
conduction band edge, 2DEG density on the Al mole fraction are
presented. The polarization fields have strong influence on 2DEG
density in the AlGaN/GaN heterojunction, so the dependency of the
conduction band edge on the polarization is also given. |
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Keywords: | GaN heterojunction exchange--correlation potential two-dimensional electron gas |
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