Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods |
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| Authors: | Ping Wang Xinqiang Wang Tao Wang Chih‐Shan Tan Bowen Sheng Xiaoxiao Sun Mo Li Xin Rong Xiantong Zheng Zhaoying Chen Xuelin Yang Fujun Xu Zhixin Qin Jian Zhang Xixiang Zhang Bo Shen |
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| Affiliation: | 1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, P. R. China;2. Collaborative Innovation Center of Quantum Matter, Beijing, P. R. China;3. King Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal, Kingdom of Saudi Arabia;4. Department of Chemistry, National Tsing Hua University, Hsinchu, Taiwan;5. Microsystem and Terahertz Research Center, China Academy of Engineering Physics (CAEP), Chengdu, P. R. China |
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| Abstract: | Lattice‐symmetry‐driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar‐patterned GaN templates using molecular beam epitaxy. High‐resolution transmission electron microscopy confirms that two kinds of lattice‐symmetry, wurtzite (wz) and zinc‐blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N‐polarity. The zb‐GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices. |
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| Keywords: | gallium nitride hierarchical nanotripods lattice symmetry microstructures molecular beam epitaxy nanowires |
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