| ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV~(35) Cl~(6+) BEAM |
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| 作者姓名： | 杨熙宏 韦伦存 李认兴 于金祥 梁斌 任晓棠 王兆江 洪秀花 张利春 |
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| 作者单位： | Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China，Peking University Beijing 100871 China |
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| 摘 要： | In this paper, an elastic recoil detection analysis method is described using 35 MeV ~(35)Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.
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ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV~(35) Cl~(6+) BEAM |
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| Yang Xihong Wei Luncun Li Renxing Yu Jinxiang Liang Bin Ren Xiaotang Wang Zhaojiang Hong Xiuhua Zhang Lichun.ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV~(35) Cl~(6+) BEAM[J].Nuclear Science and Techniques,1992(3). |
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| Authors: | Yang Xihong Wei Luncun Li Renxing Yu Jinxiang Liang Bin Ren Xiaotang Wang Zhaojiang Hong Xiuhua Zhang Lichun |
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| Abstract: | In this paper, an elastic recoil detection analysis method is described using 35 MeV ~(35)Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon. |
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| Keywords: | Elastic recoil detection analysis Depth Resolution Mass resolution He implantation profile Co/Si and TiN thin films |
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