微梁结构热偶微波功率传感器的灵敏度分析

在微波技术研究中，微波功率是表征微波信号特性的一个重要参数。微波功率测量已成为电磁测量的重要部分，可应用于很多场合，如发射机输出功率（包括天线系统辐射的功率）和振荡器输出功率的测量，毫瓦计的校准，标准信号发生器的校准等。微波功率传感器是微波功率计探头中的核心元件。微梁结构热偶微波功率传感器选择具有低电阻温度系数的Ta2N和高热电功率塞贝克系数的Si作为热偶材料，利用半导体工艺和NEMS工艺制作。器件获得了比薄膜结构更高的灵敏度，并且具有动态范围大、零点漂移小等特点，此结构已有多种形式。着重从理论上分析了MIS结构对该传感器灵敏度的影响，并提出了一种新的结构设计，以进一步提高器件性能。

Analysis of Sensitivity of Microbridge Structure Thermocouple Type Microwave Power Sensor

In the research of microwave technology,microwave power is an important parameter which tokens the characteristic of microwave signal.Microwave power measurements have taken an important role in electromagnetics,it can be used in many cases,for example,it can be used to measure output of transmitter(includes power of antenna system)and monofier,and to adjust miliwatt power weter and standard signal generator,etc.Microwave power sensor is the core component of microwave power meter.In microbridge structure thermocouple type microwave power sensor,Ta 2N of relatively low resistor-temperature coefficient and Si of relatively high termoelectric power seebeck coefficient are used as thermocouple materials,and the sensor is fabricated by using semiconductor technics and MEMS technics.Microbridge structure thermocouple type microwave power sensor gains higher sensitivity than thin-film structure,and it possesses high dynamic range and small zero drift,designed several different structure about it.The influences of MIS structure on the sensitivity of the sensor were analyzed,and a new structure was developed to improve it's capability.