Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device |
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| Affiliation: | 1.Department of Physics and Jiujiang Research Institute, Xiamen University, Xiamen 361005, China;2.College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China |
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| Abstract: | The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO2/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface. |
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| Keywords: | filament memory resistive switching |
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