原位退火对碲锌镉晶体第二相夹杂缺陷的影响

采用传统布里奇曼法生长碲锌镉晶体，在配料过程中添加适当过量的Cd，并在晶体生长结束阶段的降温过程中加入晶锭原位退火工艺，晶体的第二相夹杂缺陷得到了有效抑制。根据晶体第二相夹杂缺陷的形成机理，结合热扩散理论和碲锌镉晶体的P-T相图，研究了退火温度对晶体第二相夹杂缺陷密度和粒度（尺寸）的影响，获得了抑制碲锌镉晶体第二相夹杂缺陷的退火条件。利用优化的退火条件制备碲锌镉晶体，晶体第二相夹杂缺陷的尺寸小于10 μm，密度小于250 cm－2。

Effect of in-Situ Post-annealing on the Second Phase Inclusion Defects

Second-phase-inclusion defects in Bridgman-grown CdZnTe crystals were decreased via post-growth in-situ annealing combined with excess Cd in CdZnTe ingots. Based on the formation mechanism of the second-phase-inclusion defects in Bridgman-grown CdZnTe, the relationship between second-phase-inclusion defects and annealing temperature was studied. The size of second-phase-inclusion defects was reduced to less than 10 μm and their density to less than 250 cm-2 in CdZnTe at an optimized in-situ post-annealing temperature.