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AlGaN/GaN double-channel HEMT |
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| Authors: | Quan Si Hao Yue Ma Xiaohu Zheng Pengtian and Xie Yuanbin |
| Affiliation: | Xidian University, Xi'an 710126, China;Xidian University, Xi'an 710126, China;Xidian University, Xi'an 710126, China;Xidian University, Xi'an 710126, China;Xidian University, Xi'an 710126, China |
| Abstract: | The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. |
| Keywords: | high-electron mobility transistor AlGaN/GaN/AlGaN/GaN double-channel |
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