外腔半导体激光器的设计与高次谐波稳频

首先讨论了半导体激光器外腔结构参量对激光连续可调范围影响的理论计算方法，给出了Littrow结构外腔半导体激光器调谐范围的计算结果。然后介绍了半导体激光器外腔结构参量的具体设计，利用该设计得到了出射激光线宽小于1 MHz、连续可调谐范围可达3 GHz的780 nm波段外腔半导体激光器。接着讨论了利用腔外饱和吸收谱的三次谐波稳频方法对半导体激光器进行稳频，优化激光频率短期稳定度的方法。最后根据该优化方法设计出稳频系统对半导体激光器进行稳频，得到了稳定度达到10-12量级的半导体激光输出。

Structure design and third-harmonic frequency stabilization of the external cavity semiconductor laser

The theoretical results on the relation between the continuous wavelength tuning range of Littrow configuration for external cavity semiconductor laser (ECL) and its geometric parameters are reported. A Littrow configuration ECL is designed, which features that the continuous tuning range is more than 3 GHz and the linewidth is less than 1 MHz. The short-term stability of ECL based on saturation absorption third-harmonic frequency stabilization is optimized to the order of 10-12.