SiO 2基底上化学镀Ni-Mo-P薄膜的生长和形成机理

采用化学镀方法在SiO2/Si 基底上制备Cu互联线用阻挡层材料Ni-Mo-P薄膜。采用场发射扫描电子显微镜、电子分散能谱仪、原子力显微镜分析不同沉积时间样品的表面形貌和成分，并对Ni-Mo-P薄膜的形成过程进行研究。Ni-Mo-P薄膜的形成过程分为3个阶段：催化阶段，先前还原的Pd颗粒成为Ni还原的催化形核中心，诱导Ni沉积；覆盖阶段，Ni颗粒诱导Mo、P与之进行共沉积；自生长阶段，Ni-Mo-P薄膜共同沉积，颗粒生长。阐述了还原剂被氧化后产物为3-4PO 的的反应机理。

Growing process and reaction mechanism of electroless Ni-Mo-P film on SiO 2 substrate

The diffusion barrier Ni-Mo-P film for Cu interconnects was prepared on SiO2/Si substrate using electroless method. The surface morphology and composition during the formation process of electroless Ni-Mo-P film were investigated through analyzing samples of different deposition time. Induced nucleation, induced co-deposition, and self-induced growth mechanisms involved in electroless process were confirmed by field-emission scanning electron microscopy （FE-SEM）, energy dispersive spectrometry and atomic force microscopy （AFM）. Firstly, the preceding palladium particles as catalysts induce the nucleation of nickel. Secondly, the nickel particles induce the deposition of molybdenum and phosphorus, which attributes to induced co-deposition. Thirdly, former deposited Ni-Mo-P induces deposition of the latter Ni-Mo-P particles. Moreover, the reaction mechanism was proposed with the oxydate of 3-4PO .