| 高电导本征纳米硅膜及其缓冲层太阳能电池 |
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| 引用本文： | 崔敏,张维佳,钟立志,吴小文,王天民,李国华. 高电导本征纳米硅膜及其缓冲层太阳能电池[J]. 电子元件与材料, 2006, 25(4): 47-49 |
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| 作者姓名： | 崔敏 张维佳 钟立志 吴小文 王天民 李国华 |
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| 作者单位： | 北京航空航天大学理学院凝聚态物理与材料物理研究中心,北京,100083;中国科学院半导体研究所半导体超晶格国家重点实验室,北京,100083 |
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| 摘 要： | 通过PECVD法制备了纳米硅薄膜(nc-Si:H),采用Raman散射谱,AFM对样品的结构和形貌进行了测试,并测试了样品的室温电导率。结果表明:制备出的纳米硅薄膜,其电导率达到4.9S·cm-1。另外制备了本征nc-Si:H膜作缓冲层,结构为ITO/n+-nc-Si:H/i-nc-Si:H/p-c-Si/Ag的PIN型太阳能电池,其Voc达到534.7mV,Isc达到49.24mA(3cm2),填充因子FF为0.4228。
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| 关 键 词： | 无机非金属材料 纳米硅 电导率 PECVD 薄膜 太阳能电池 |
| 文章编号： | 1001-2028（2006）04-0047-03 |
| 收稿时间： | 2005-11-30 |
| 修稿时间： | 2005-11-30 |
High Conductivity Intrinsic Nanocrystalline Silicon Film and as Buffer Layer in Thin Film Solar Cells |
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| CUI Min,ZHANG Wei-jia,ZHONG Li-zhi,WU Xiao-wen,WANG Tian-min,LI Guo-hua. High Conductivity Intrinsic Nanocrystalline Silicon Film and as Buffer Layer in Thin Film Solar Cells[J]. Electronic Components & Materials, 2006, 25(4): 47-49 |
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| Authors: | CUI Min ZHANG Wei-jia ZHONG Li-zhi WU Xiao-wen WANG Tian-min LI Guo-hua |
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| Abstract: | Intrinsic nanocrystalline silicon films(nc-Si:H)were prepared through plasma enhanced chemical vapor deposition(PECVD).The films' structure and surface topography were measured with Raman spectrum and atom force microscope(AFM),and films' room temperature conductivity was tested.The results show that high quality nc-Si:H films are prepared with conductivity of 4.9 S·cm-1.And PIN solar cell with nc-Si:H film as intrinsic thin-layer is prepared,the solar cell's structure is ITO/n+-nc-Si:H/i-nc-Si:H/p-c-Si/Ag.The cell's performances are measured and its open-circuit voltage Voc is 534.7 mV,short-circuit current Isc is 49.24 mA(3 cm2)and fill factor is 0.422 8. |
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| Keywords: | PECVD |
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