Formation of InP-based quantum structures by selective MBE on patterned substrates having high-index facets

In view of applications to next-generation electronics based on quantum devices, this paper presents and discusses the results of a systematic study recently done by the authors' group on the growth conditions, characterization and device application of InP-based In_0.52Al_0.48As/In_0.53Ga_0.47As quantum wires and dots formed by selective M13E growth on mesa-patterned (001) InP substrates. First, selective MBE growth experiments of InAlAs/InGaAs wire and dot structures on patterned (001) InP substrates are discussed generally. Then, particular attention is paid to successful growth conditions and properties of (110) oriented InAlAs/InGaAs ridge quantum wires (QWRs), including the effect of misorientation of mesa stripes. Finally, device related issues such as successful surface passivation by a technique using a silicon interface control layer (Si ICL) and electronic transport characterization by QWR transistors are discussed. The QWR transistor exhibited excellent gate-controlled one-dimensional transport with the appearance of clear conductance oscillations near pinch-off, visible up to about 50K.