负带隙HgCdTe体材料的磁输运特性研究

通过单晶生长了Cd组分为0.1的p型HgCdTe体材料,并制备了具有倒置型能带序的HgCdTe场效应器件.通过磁输运测试,在负带隙HgCdTe体材料中观察到明显的量子霍尔平台效应和Shubnikov-de Haas(SdH)振荡效应,证明样品具有较好的质量.利用SdH振荡对1/B关系的快速傅里叶变换,得到了样品的零场自旋分裂能约为26.55 meV,证明样品中存在强自旋-轨道耦合作用.进一步分析SdH中的拍频节点估算了样品中的有效g因子约为–11.54.

Magnetotransport property of negative band gap HgCdTe bulk material

In recent years, spintronic devices have attracted more and more attention because of their good characteristics. The spin-orbit coupling of HgCdTe is one of the most important parts in the study of narrow gap semiconductors. The magneotransport properties of the Hg_0.9Cd_0.1Te bulk material with an inverted band structure have been hardly reported so far. The spin-orbit coupling strength of HgCdTe is closely related to the band gap. The strength of the spin-orbit coupling increases with the width of the band gap decreasing. Thus, Hg_0.9Cd_0.1Te should have strong spin-orbit coupling. Meanwhile it should be one of the most suitable materials to fabricate spintronic devices. The main propose of our experiments is to prove this inference. Inside the sample, Rashba spin-orbit interaction (SOI) strongly influences the spin-splitting due to the lack of structural inversion symmetry. In other words, Rashba SOI is the main part of the zero field spin splitting △₀. The band structure of Hg_1-xCd_xTe can be precisely tuned by changing the composition of Cd which keeps an inverted band order when 0 < x < 0.165 and returns to the normal case with the Γ₈ band lying below the Γ₆ band (or equivalently a positive band gap) when x0.165. In this paper, the p-type HgCdTe bulk material with Cd component of 0.1 is grown by single crystal. Anodic oxidation is used to induce an inversion layer on the HgCdTe bulk, and indium is used to facilitate Ohmic contacts. The magnetoresistance is measured in the van der Pauw configuration, and the magnetic field is applied perpendicularly to the film. All measurements are carried out in an Oxford Instruments He cryogenic system. At 1.5 K and zero gate voltage, the carrier density n is 1.3×10¹⁶ m^-2. Clear Shubnikov-de Haas (SdH) oscillation in ρ_xx and quantum Hall plateaus of R_xy are observed in the Hg_0.9Cd_0.1Te bulk material with an inverted band structure is investigated in magnetotransport experiment. This indicates that our sample is a good transistor. Fast Fourier transformation is used to deduce the zero-field spin-splitting △₀ which is about 26.55 meV. By studying the beating patterns in SdH oscillations we find that the effective g-factor is about-11.54. Both the large zero field spin splitting and the negative effective g-factor suggest that Hg_0.9Cd_0.1Te has really strong spin-orbit coupling. The investigation of SOI in Hg_0.9Cd_0.1Te can increase our knowledge of Hg-based narrow-gap semiconductors and benefit the field of spintronics.