| 单层FeSe薄膜/氧化物界面高温超导 |
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| 引用本文： | 丁翠,刘充,张庆华,龚冠铭,汪恒,刘效治,孟繁琦,杨好好,武睿,宋灿立,李渭,何珂,马旭村,谷林,王立莉,薛其坤.单层FeSe薄膜/氧化物界面高温超导[J].物理学报,2018,67(20):207415-207415. |
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| 作者姓名： | 丁翠 刘充 张庆华 龚冠铭 汪恒 刘效治 孟繁琦 杨好好 武睿 宋灿立 李渭 何珂 马旭村 谷林 王立莉 薛其坤 |
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| 作者单位： | 1. 清华大学物理系, 低维量子物理国家重点实验室, 北京 100084;
2. 中国科学院物理研究所, 先进材料与结构分析实验室, 北京凝聚态物理国家研究中心, 北京 100190;
3. 量子物质科学协同创新中心, 北京 100084 |
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| 基金项目： | 国家自然科学基金（批准号：11574174，11774193，11790311，51522212，51421002，51672307）、国家重点基础研究发展计划（批准号：2015CB921000，2014CB921002）和中国科学院战略优先研究项目（批准号：XDB07030200）资助的课题. |
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| 摘 要： | 单层FeSe/SrTiO3界面增强超导的发现为理解高温超导机理提供了一个新的途径，也为实现新的高温超导体开拓了新思路.本文通过在SrTiO3（001）表面高温沉积Mg进而沉积单层FeSe薄膜，制备出了FeSe/MgO双层/SrTiO3异质结.利用扫描隧道显微镜研究了异质结的电学及超导特性，观测到约14–15 meV的超导能隙，比体相FeSe超导能隙值增大了5–6倍，与K掺杂双层FeSe/SrTiO3的超导能隙值相当.这一结果可理解为能带弯曲造成的界面电荷转移和界面处电声耦合共同作用导致的超导增强.FeSe/MgO界面是继FeSe/TiO2之后的一个新界面超导体系，为研究界面高温超导机理提供了新载体.
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| 关 键 词： | FeSe/MgO界面 界面超导增强 扫描隧道显微镜 扫描透射电子显微镜 |
| 收稿时间： | 2018-09-10 |
Interface enhanced superconductivity in monolayer FeSe film on oxide substrate |
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| Ding Cui,Liu Chong,Zhang Qing-Hua,Gong Guan-Ming,Wang Heng,Liu Xiao-Zhi,Meng Fan-Qi,Yang Hao-Hao,Wu Rui,Song Can-Li,Li Wei,He Ke,Ma Xu-Cun,Gu Lin,Wang Li-Li,Xue Qi-Kun.Interface enhanced superconductivity in monolayer FeSe film on oxide substrate[J].Acta Physica Sinica,2018,67(20):207415-207415. |
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| Authors: | Ding Cui Liu Chong Zhang Qing-Hua Gong Guan-Ming Wang Heng Liu Xiao-Zhi Meng Fan-Qi Yang Hao-Hao Wu Rui Song Can-Li Li Wei He Ke Ma Xu-Cun Gu Lin Wang Li-Li Xue Qi-Kun |
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| Affiliation: | 1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
2. Beijing National Laboratory for Condensed Matter Physics, Laboratory for Advanced Materials and Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China |
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| Abstract: | We report on the observation of a superconducting gap of about 14-15 meV, significantly enlarged compared with the value of 2.2 meV for bulk FeSe, in monolayer FeSe film interfaced with MgO epitaxial on SrTiO3(001) substrate by using the scanning tunneling microscopy. While the MgO exhibits the same work function as SrTiO3 substrate, the gap magnitude is in coincidence with that of surface K-doped two-unit-cell FeSe film on SrTiO3(001), suggesting that the interface enhanced superconductivity might be attributed to cooperation of interface charge transfer driven by band bending with interface electron-phonon coupling as discovered at FeSe/TiO2 interfaces. On the other hand, the observation of such an enlarged superconducting gap, complementary to our previous transport observation of an onset superconducting transition temperature of 18 K in monolayer FeSe film on a bulk MgO substrate, implies that FeSe/MgO interface is likely to be a new interface high-temperature superconducting system, providing a new platform for investigating the mechanism of interface hightemperature superconductivity. |
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| Keywords: | FeSe/MgO interface enhanced superconductivity scanning tunneling microscopy scanning transmission electron microscopy |
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