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Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region |
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| Authors: | L. Ya. Karachinsky T. Kettler N. Yu. Gordeev I. I. Novikov M. V. Maximov Yu. M. Shernyakov N. V. Kryzhanovskaya A. E. Zhukov E. S. Semenova A. P. Vasil’ev V. M. Ustinov N. N. Ledentsov A. R. Kovsh V. A. Shchukin S. S. Mikhrin A. Lochmann O. Schulz L. Reissmann D. Bimberg |
| Affiliation: | 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2. Institut für Festk?rperphysik, Technische Universit?t, D-10623, Berlin, Deutschland 3. NL-Nanosemiconductor GmbH, 44227, Dortmund, Deutschland |
| Abstract: | Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels. |
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