Auger recombination in long-wavelength strained-layer quantum-wellstructures |
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Authors: | Jin Wang von Allmen P Leburton J-P Linden KJ |
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Affiliation: | Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL; |
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Abstract: | A model calculation of Auger recombination in strained-layer InGaAs-InGaAlAs and InGaAs-InGaAsP quantum-well structures is presented as an extension of an empirical Auger theory based on the effective mass approximation. The valence band effective masses around k∥=0 are calculated by using a six-band Luttinger-Kohn Hamiltonian and the quasi-Fermi levels are determined with a self-consistent Poisson-Schrodinger solver under the effective mass approximation. Three basic Auger processes are considered with the excited carrier being in a bound state of the quantum well, as well as an unbound state. The empirical model includes Fermi statistics as well as a revaluation of the Coulomb interaction overlap integral in the Auger recombination rate. Bound-unbound Auger transitions are proved to be an important nonradiative recombination mechanism in strained-layer quantum-well systems. Our calculations of Auger coefficient are in reasonable agreement with the experimental data |
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