Floating-island TFT leakage caused by process step reduction |
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| Authors: | Tsujimura T Tokuhiro O Morooka M Miyamoto T Miwa K Yoshimura Y Andry P Libsch F |
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| Affiliation: | LCD Tech. Dev., IBM Japan, Kanagawa; |
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| Abstract: | The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease |
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