单晶SiC基片的化学机械抛光技术研究进展

单晶SiC因其优异的物理化学性质而成为重要的外延衬底材料，广泛应用于卫星通信、集成电路和消费电子等领域。衬底外延生长需要单晶SiC具有较低的加工表面损伤和残余应力的超光滑平坦表面，其表面质量决定了后续的外延层质量并最终影响器件的性能。化学机械抛光(CMP)是目前实现单晶SiC基片超精密加工的一种常用且有效方法。我们综述了单晶SiC基片化学机械抛光加工的研究现状，根据加工原理进行归类并分析了各种类别的优缺点及运用局限，指出了其在化学机械抛光领域的发展前景。 

Research progress in chemical mechanical polishing of single crystal SiC substrates

Single crystal SiC has become an important epitaxial layer material because of its excellent physical and chemical properties.It is widely used in satellite communications,integrated circuits,and consumer electronics.The growth of an epitaxial layer of SiC wafer requires an ultra-smooth,flat surface with low process surface damage and residual stress on the single crystal SiC surface.The surface quality determines the subsequent epitaxial layer quality and ultimately affects the performance of the device.Chemical mechanical polishing(CMP)is a common and effective method for ultra-precision machining of single crystal SiC substrates.We summarize the research status of the single crystal SiC substrate in chemical mechanical polishing processing,categorize and analyze the advantages and disadvantages of various categories and limitations of the application according to the principle of processing,and points out the development prospects in the field of chemical mechanical polishing.