不同结合剂原料放电等离子烧结制备TiC/Ti3SiC2复合结合剂金刚石复合材料

分别以Ti/Si/2TiC混合粉体和Ti₃SiC₂单相粉体作为结合剂原料，采用放电等离子体烧结技术合成了TiC/Ti₃SiC₂结合剂金刚石复合材料，探讨不同的结合剂原料和保温时间对TiC/Ti₃SiC₂结合剂金刚石复合材料的物相构成、微观形貌以及磨削性能的影响。结果表明:采用Ti/Si/2TiC为结合剂原料，保温1 min时，会形成较多量的Ti₃SiC₂，Ti₃SiC₂基体与金刚石结合良好，二者之间没有孔隙；当保温5 min时，Ti₃SiC₂发生分解，基体主相转变为TiC，同时有一定量的Si，金刚石表面被侵蚀，形成凹凸不平的表面。采用Ti₃SiC₂为结合剂原料时，Ti₃SiC₂基体发生严重的分解，生成TiC和Si；金刚石与基体间存在一个过渡层，厚度约15 μm。Ti/Si/2TiC为结合剂原料保温1 min时试样的磨耗比值最大，为1 128。单相Ti₃SiC₂为结合剂的2个试样的磨耗比值约为100左右。 

Fabrication TiC/Ti3SiC2-diamond composites by spark plasma sintering using different binder

TiC/Ti 3 SiC 2 bonded diamond composites were fabricated by spark plasma sintering using Ti/Si/2TiC and Ti 3 SiC 2 powders as binder materials.Effect of binder material and holding time on the phase composition,microstructure and grinding properties of composites were studied.The result shows that there forms amounts of Ti 3 SiC 2 when using Ti/Si/2TiC as binder with a holding time of 1 min,and the TiC/Ti 3 SiC 2 bond has a good bond with diamond with no pores.When the holding time is 5 min,Ti 3 SiC 2 decomposes and the main phase of the matrix is transformed to TiC and a certain amount of Si.The diamonds are etched then to form uneven surface.When Ti 3 SiC 2 is used as the binder,the composite decomposes seriously to form TiC and Si.There is a transition layer with a thickness of about 15μm between diamond and the matrix.In conclusion,the grinding ratio of the sample from Ti/Si/2TiC binder with a holding time of 1 min reaches the maximum value of 1128,while the grinding ratios of the samples from Ti 3 SiC 2 binder with holding time of 1 min or 5 min were about 100.