首页 | 官方网站   微博 | 高级检索  
     


Preparation and Physicochemical Properties of 10-Hydroxycamptothecin (HCPT) Nanoparticles by Supercritical Antisolvent (SAS) Process
Authors:Zhao Xiuhua  Zu Yuangang  Jiang Ru  Wang Ying  Li Yong  Li Qingyong  Zhao Dongmei  Zu Baishi  Zhang Baoyou  Sun Zhiqiang  Zhang Xiaonan
Affiliation:Key Laboratory of Forest Plant Ecology, Northeast Forestry University, Ministry of Education, Harbin 150040, China; E-Mails: xiuhuazhao@nefu.edu.cn (X.Z.); 644677614@qq.com (R.J.); 41611005@qq.com (Y.W.); 724506183@qq.com (Y.L.); qingyong_li@163.com (Q.L.); 156828568@qq.com (D.Z.); zubaishi@163.com (B.Z.); zhangbaoyou@163.com (B.Z.); zhiqiangshun@163.com (Z.S.); 56573995@qq.com (X.Z.).
Abstract:The goal of the present work was to study the feasibility of 10-hydroxycamptothecin (HCPT) nanoparticle preparation using supercritical antisolvent (SAS) precipitation. The influences of various experimental factors on the mean particle size (MPS) of HCPT nanoparticles were investigated. The optimum micronization conditions are determined as follows: HCPT solution concentration 0.5 mg/mL, the flow rate ratio of CO(2) and HCPT solution 19.55, precipitation temperature 35 °C and precipitation pressure 20 MPa. Under the optimum conditions, HCPT nanoparticles with a MPS of 180 ± 20.3 nm were obtained. Moreover, the HCPT nanoparticles obtained were characterized by Scanning electron microscopy, Dynamic light scattering, Fourier-transform infrared spectroscopy, High performance liquid chromatography-mass spectrometry, X-ray diffraction and Differential scanning calorimetry analyses. The physicochemical characterization results showed that the SAS process had not induced degradation of HCPT. Finally, the dissolution rates of HCPT nanoparticles were investigated and the results proved that there is a significant increase in dissolution rate compared to unprocessed HCPT.
Keywords:10-hydroxycamptothecin   supercritical antisolvent   nanoparticles   preparation   physicochemical properties
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号