氮离子束能量对光伏新材料氮化碳薄膜的影响

将碳基材料应用于太阳电池半导体器件的研究已经在国内外得到重视和开展。采用离子束溅射反应沉积技术,在p型绒面硅和p型硅基片上沉积出用于制备太阳电池的氮化碳薄膜(a-C:N)。ID/IG比率,ISi/IG比率是研究氮化碳薄膜微结构的重要拉曼参数,对这些参数随氮离子束能量的变化进行了研究。能量散射光谱(EDS)和透射电子显微镜(TEM)测试显示随氮离子束能量增大,薄膜中氮原子含量下降,团簇尺寸大幅下降,非晶网络中团簇分布也趋于均匀。用真空热蒸镀工艺在氮化碳/硅异质结的氮化碳薄膜表面镀上一层半透明的铝薄膜,测得AM1.5标准光照下的开路电压随氮离子束能量的增加而增大。

Influence of nitrogen ion energy on photovoltaic new material carbon nitride films

Carbon-based material has been attempted as a semiconductor in photovoltaic solar cell. Carbon nitride (a-C:N) thin films also have been deposited for solar cell applications. Carbon nitride films were deposited on p-type textured Si and p-type Si substrates by ion beam sputtering technique. The dependence of I D/I G ratio and I Si/I G ratio on nitrogen ion energy is discussed, which are the important Raman parameters in studying the structure of carbon nitride films. The results of EDS and TEM indicate that atomic concentration of nitrogen and the sizes of clusters decrease, and that the thin film morphology becomes more uniform in the amorphous mixture with the increasing nitrogen ion energy. A sub-transparent Al film was evaporated on the carbon nitride films of carbon nitride/Si heterojunctions by heat evaporation technique. Under illumination of AM 1.5 standard light source, the open-circuit voltage of Al/a-C:N/p-Si increases with the increase of nitrogen ion energy.