Versatile α,ω‐Disubstituted Tetrathienoacene Semiconductors for High Performance Organic Thin‐Film Transistors |
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| Authors: | Jangdae Youn Peng‐Yi Huang Yu‐Wen Huang Ming‐Chou Chen Yu‐Jou Lin Hui Huang Rocio Ponce Ortiz Charlotte Stern Ming‐Che Chung Chieh‐Yuan Feng Liang‐Hsiang Chen Antonio Facchetti Tobin J. Marks |
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| Affiliation: | 1. Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Rd., Evanston, IL 60208‐3113, USA;2. Department of Chemistry, National Central University, Jhong‐Li 32054, Taiwan;3. Department of Physical Chemistry, University of Malaga, 29071, Malaga, Spain;4. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 31040, R.O.C. |
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| Abstract: | Facile one‐pot [1 + 1 + 2] and [2 + 1 + 1] syntheses of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene (tetrathienoacene; TTA) semiconductors are described which enable the efficient realization of a new TTA‐based series for organic thin‐film transistors (OTFTs). For the perfluorophenyl end‐functionalized derivative DFP‐TTA , the molecular structure is determined by single‐crystal X‐ray diffraction. This material exhibits n‐channel transport with a mobility as high as 0.30 cm2V?1s?1 and a high on‐off ratio of 1.8 × 107. Thus, DFP‐TTA has one of the highest electron mobilities of any fused thiophene semiconductor yet discovered. For the phenyl‐substituted analogue, DP‐TTA , p‐channel transport is observed with a mobility as high as 0.21 cm2V?1s?1. For the 2‐benzothiazolyl (BS‐) containing derivative, DBS‐TTA , p‐channel transport is still exhibited with a hole mobility close to 2 × 10?3 cm2V?1s?1. Within this family, carrier mobility magnitudes are strongly dependent on the semiconductor growth conditions and the gate dielectric surface treatment. |
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| Keywords: | tetrathienoacene TTA fused thiophene n‐type organic semiconductor |
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