Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing |
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Authors: | E Belas M Bugár R Grill P Horodyský R Feš J Franc P Moravec Z Matěj P Höschl |
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Affiliation: | (1) Institute of Physics, Charles University, Ke Karlovu 5, Prague 2, CZ, 121~16, Czech Republic;(2) Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague 2, CZ, 121~16, Czech Republic |
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Abstract: | Post-grown annealing of (211) (CdZn)Te substrates has been used for elimination of Te and Cd inclusions with the objective
of improving the yield of inclusion-free substrates for MBE growth of (HgCd)Te. Different annealing temperatures and Cd/Te
overpressures were used to find the optimum annealing conditions. Te inclusions were significantly reduced by Cd-rich annealing
at temperatures higher than 660°C, together with increasing the infrared transmittance at 10 μm to above 60%. Good crystalline
quality was preserved after the annealing. Te-rich annealing at 700°C was found to be the optimum method for elimination of
most of the Cd inclusions; infrared transmittance at 10 μm was suppressed by the annealing, however. Final Cd-rich annealing
is recommended for infrared transmittance improvement. |
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Keywords: | (CdZn)Te annealing diffusion inclusions |
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