F8BT∶P3HT共混薄膜放大自发辐射的温度效应

研究了温度对聚合物poly(9,9-dioctylfluorene-co-benzothiadiazole)(F8BT)和poly(3-hexylthiophene)(P3HT)共混薄膜的放大自发辐射(ASE)的影响。在80~320 K温度范围测试了不同P3HT质量比的共混聚合物薄膜和纯F8BT薄膜的ASE特性。在室温条件下,共混聚合物的阈值随着P3HT所占比例的增加先降低后升高。当P3HT比例约为20%时,阈值最低约为2.59×10~3W/cm~2。当温度从320 K下降到80 K时,纯F8BT薄膜的ASE阈值光功率由5.36×10~3W/cm~2下降到4.15×10~3W/cm~2,P3HT质量比为20%的共混薄膜的ASE阈值光功率由2.84×10~3W/cm~2下降到2.03×10~3W/cm~2。在一特定泵浦光功率(5.29×10~3W/cm~2)下,当温度由320 K下降至80 K时,ASE强度约提高4倍。随着温度的降低,混合物薄膜的ASE峰位红移,移动达12 nm。

Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8 BT and P3 HT

The temperature dependence of amplified spontaneous emission ( ASE) from blend film of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly(3-hexylthiophene) (P3HT) was investigated. ASE from blend film with various P3HT mass ratio and F8BT film in the range of 80-320 K was measured. The results show that the threshold of blend film decreases at first and then in-creases at room temperature with the increasing of P3HT ratio. Low ASE threshold about 2. 59í103 W/cm2 is achieved for the blend with 20% P3HT ratio. When the temperature dropped from 320 K to 80 K, ASE threshold of the blend with 20% P3HT decreases from 2. 84í103 W/cm2 at 320 K to 2. 03í103 W/cm2 at 80 K, and ASE output intensity at the pump intensity of 5. 29í103 W/cm2 in-creases fourfold. Meanwhile, a 12 nm redshift in ASE wavelength of the blend film is found with the reducing of the temperature.