| Ka频段GaAs单片平衡混频器 |
| |
| 引用本文： | 江关辉,高葆新.Ka频段GaAs单片平衡混频器[J].固体电子学研究与进展,1996,16(4):388-392. |
| |
| 作者姓名： | 江关辉 高葆新 |
| |
| 作者单位： | [1]南京电子器件研究所 [2]清华大学微波与数字通信国家重点实验室 |
| |
| 摘 要： | 报道Ｋａ频段ＧａＡｓ单片平衡混频器的设计和研究结果。用自行开发的“ＴＵＭＭＩＸＥＲ”软件进行电路设计，工艺以半绝缘ＧａＡｓ为衬底，采用ＮｂＭｏ／ＧａＡｓ接触形成肖特基势垒二极管，以ＳｉＯ２和聚酰亚胺双介质为保护膜，增强了工艺的成功率。研制成功的芯片尺寸为：２ｍｍ×３ｍｍ×０．２ｍｍ，在ｆ＝３１～３６ＧＨＺ范围内ＮＦＳＳＢ≤１０ｄＢ，最佳点ｆ＝３２．２ＧＨｚＮＦ．ＳＳＢ＝８．７ｄＢ［ｆＩＦ＝１．２ＧＨｚ］。
|
| 关 键 词： | Ka频段，单片混频器，砷化镓 |
A Ka-band Monolithic GaAs Balanced Mixer |
| |
| Jiang Guanhui,Gao Baoxin,Sun Baigen , Sun Yingxin.A Ka-band Monolithic GaAs Balanced Mixer[J].Research & Progress of Solid State Electronics,1996,16(4):388-392. |
| |
| Authors: | Jiang Guanhui Gao Baoxin Sun Baigen Sun Yingxin |
| |
| Abstract: | The desegh,fabrication and characterization of a Ka-band monolithic Balanced mixer are eesrcibed in this paper, The design of the circuti is performed by An in-house developed prpgram TUMIXER, the Ka-band monoliothic GaAs balanced Mixer is fabricated by using semi-insulating GsAs single crystal as substrafte, BbmO/GaSA contactb as Schottky barrier diodes, and SiO2and polyimide coating as Protecting film.The chip size is 2mm×3mm×0.2mm.The mixer provides a SSB Noise figure less than 10dB in th frequency rage of 31-36 GHz The best SSB noiseFigure is 8.7dB at frequency of 32.2GHz with fW of 1.2GHz. |
| |
| Keywords: | Ka-band Monolithic Mixer GaAs |
| 本文献已被 CNKI 维普 等数据库收录！ |
