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Room temperature ferromagnetic pure ZnO |
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| Authors: | Qingyu Xu Zheng WenLiguo Xu Jinlong GaoDi Wu Kai ShenTeng Qiu Shaolong TangMingxiang Xu |
| Affiliation: | a Department of Physics, Southeast University, Nanjing 211189, China b Department of Materials Science and Engineering, Nanjing University, Nanjing 210008, China c School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China d Department of Physics, Nanjing University, Nanjing 210008, China |
| Abstract: | Pure ZnO films were prepared by pulsed laser deposition on oxidized Si substrates under different oxygen pressure and substrate temperature. Clear room temperature ferromagnetism has been observed in the ZnO film prepared under high vacuum and room temperature. The observation of anomalous Hall effect confirms the intrinsic nature of the ferromagnetism. The photoluminescence and X-ray photoelectron spectroscopy spectra show the high concentration of oxygen vacancies in the ferromagnetic ZnO film. Our results clearly demonstrate the ferromagnetic contribution of the oxygen vacancies mediated by the spin polarized electrons hopping between discrete states in pure ZnO. |
| Keywords: | Diluted magnetic semiconductor ZnO Oxygen vacancies Ferromagnetism |
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