| 双势垒隧道发光结的结构特点及其性能分析 |
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| 引用本文： | 王茂祥,聂丽程,张佑文,俞建华,孙承休. 双势垒隧道发光结的结构特点及其性能分析[J]. 固体电子学研究与进展, 2008, 28(1): 16-19 |
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| 作者姓名： | 王茂祥 聂丽程 张佑文 俞建华 孙承休 |
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| 作者单位： | 南京大学工程管理学院,南京,210093;东南大学电子科学与工程学院,南京,210096 |
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| 摘 要： | 成功地制备了Cu-Al2O3-MgF2-Au及Si-SiO2-Al-Al2O3-Au两种结构双势垒隧道发光结。由于双势垒结中第二栅存在着不同的分立能级,电子存在共振隧穿效应,使双势垒隧道结发光光谱的波长范围及谱峰位置比普通单势垒隧道结均向短波方向发生了移动。对双势垒隧道发光结的I-V特性测试表明,I-V曲线中存在着明显的负阻区,分析表明,负阻现象与电子的隧穿特性、表面等离极化激元(SPP)的激发及SPP的耦合发光之间相互关联。
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| 关 键 词： | 隧道发光结 双势垒 共振隧穿 发光光谱 负阻现象 |
| 文章编号： | 1000-3819(2008)01-016-04 |
| 修稿时间： | 2006-03-02 |
Structure and Characteristics of the Double-barrier Light Emission Tunnel Junctions |
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| WANG Maoxiang,NIE Licheng,ZHANG Youwen,YU Jianhua,SUN Chengxiu. Structure and Characteristics of the Double-barrier Light Emission Tunnel Junctions[J]. Research & Progress of Solid State Electronics, 2008, 28(1): 16-19 |
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| Authors: | WANG Maoxiang NIE Licheng ZHANG Youwen YU Jianhua SUN Chengxiu |
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| Affiliation: | WANG Maoxiang1 NIE Licheng2 ZHANG Youwen2 YU Jianhua2 SUN Chengxiu2(1 School of Management , Engineering,Nanjing University,Nanjing,210093,CHN)(2 School of Electronic Science , Engineering,Southeast University,210096,CHN) |
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| Abstract: | The two kinds of double-barrier light emission tunnel junctions Cu-Al2O3-MgF2-Au and Si-SiO2-Al-Al2O3-Au have been fabricated successfully.Because of the split energy levels in the second barrier,the electrons will tunnel resonantly the double barriers from the bottom to top electrodes.The resonant electrons tunneling will result in the energy enhancement of the surface plasmon polariton(SPP),and thus the light emission spectrum and its peak moving towards the shorter wavelength region in comparison with th... |
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| Keywords: | light emission tunnel junction double-barrier resonant electrons tunneling light emission spectrum negative resistance phenomenon |
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