Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors |
| |
Authors: | Austin P. Caminade J. Sanchez J.L. |
| |
Affiliation: | CNRS, Toulouse, France; |
| |
Abstract: | The aim was to fabricate a polysilicon emitter bipolar transistor for power applications. To this end, different polysilicon deposition steps compatible with the power bipolar technology and their influence on electrical characteristics were studied.<> |
| |
Keywords: | |
|
|